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MOSFET N-CH 100V 21A TO263-3
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO263-3-2 | 80 mOhm | 4 V | 865 pF | Surface Mount | 21 A | N-Channel | 20 V | 100 V | 10 V | 38.4 nC | MOSFET (Metal Oxide) | 90 W | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |