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STGB30V60DF - D²PAK

STGB30V60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 30 A VERY HIGH SPEED

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STGB30V60DF - D²PAK

STGB30V60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 30 A VERY HIGH SPEED

Deep-Dive with AI

Documents+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB30V60DF
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge163 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]258 W
Reverse Recovery Time (trr)53 ns
Supplier Device PackageD2PAK
Switching Energy383 µJ, 233 µJ
Td (on/off) @ 25°C45 ns, 189 ns
Test Condition15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.60
10$ 2.35
100$ 1.64
500$ 1.44
Digi-Reel® 1$ 3.60
10$ 2.35
100$ 1.64
500$ 1.44
Tape & Reel (TR) 1000$ 1.24
2000$ 1.17

Description

General part information

STGB30H60DLLFBAG Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.