STGB30H60DLLFBAG Series

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Catalog

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Test Condition	IGBT Type	Gate Charge	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Switching Energy	Supplier Device Package	Td (on/off) @ 25°C	Input Type	Td (on/off) @ 25°C	Switching Energy [custom]	Switching Energy [custom]	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGB30V60DF	258 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.3 V	120 A	10 Ohm 15 V 30 A 400 V	Trench Field Stop	163 nC	53 ns	-55 °C	175 ░C	Surface Mount	45 ns 189 ns	60 A	233 µJ 383 µJ	D2PAK
STMicroelectronics STGB30H60DLLFBAG	260 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.15 V	120 A	5 V 10 Ohm 30 A 400 V	Trench Field Stop	110 nC		-55 °C	175 ░C	Surface Mount	320 ns	60 A	600 µJ	TO-263 (D2PAK)	-	Logic
STMicroelectronics STGB30H60DLFB	260 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	120 A	10 Ohm 15 V 30 A 400 V	Trench Field Stop	149 nC		-55 °C	175 ░C	Surface Mount		60 A	393 µJ	TO-263 (D2PAK)	-/146ns
STMicroelectronics STGB30H60DFB	260 W	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	120 A	10 Ohm 15 V 30 A 400 V	Trench Field Stop	149 nC	53 ns	-55 °C	175 ░C	Surface Mount		60 A		TO-263 (D2PAK)			37 ns 146 ns	383 µJ	293 µJ
STMicroelectronics STGB30H65FB	260 W		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	120 A	10 Ohm 15 V 30 A 400 V	Trench Field Stop	149 nC		-55 °C	175 ░C	Surface Mount		60 A		TO-263 (D2PAK)			37 ns 146 ns			650 V

Catalog

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.