DMP65H20D0HSS-13
ActiveDiodes Inc
TRANSISTOR MOSFET P-CHANNEL 600V 0.2A 8-PIN SOIC T/R
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DMP65H20D0HSS-13
ActiveDiodes Inc
TRANSISTOR MOSFET P-CHANNEL 600V 0.2A 8-PIN SOIC T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP65H20D0HSS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) @ Id, Vgs | 20 Ohm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMP65H20D0HSS Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources