DMP65H20D0HSS Series

600V P-Channel Enhancement Mode MOSFET

Catalog

600V P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Mounting Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Diodes Inc DMP65H20D0HSS-13	1.9 W	Surface Mount	MOSFET (Metal Oxide)	30 V	200 mA	-55 °C	150 °C	9.7 nC	8-SO	8-SOIC	3.9 mm	0.154 in	4 V	400 pF	P-Channel	600 V	10 V	20 Ohm

Catalog

600V P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• High BVDSS Rating for Power Application

• Low Input Capacitance

• Fast Switching

• High Efficiency

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.