IMW65R027M1HXKSA1

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Infineon Technologies

COOLSIC™ MOSFET TECHNOLOGY LEVERAGES THE STRONG PHYSICAL CHARACTERISTICS OF SILICON CARBIDE, ADDING UNIQUE FEATURES WHICH INCREASE THE DEVICE PERFORMANCE, ROBUSTNESS, AND EASE OF USE.

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IMW65R027M1HXKSA1

Active

Infineon Technologies

COOLSIC™ MOSFET TECHNOLOGY LEVERAGES THE STRONG PHYSICAL CHARACTERISTICS OF SILICON CARBIDE, ADDING UNIQUE FEATURES WHICH INCREASE THE DEVICE PERFORMANCE, ROBUSTNESS, AND EASE OF USE.

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R027M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2131 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	189 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	PG-TO247-3-41
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

IMW65R027 Series

Part	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IMW65R027M1HXKSA1	TO-247-3	5.7 V	62 nC	189 W	18 V	47 A	Through Hole	PG-TO247-3-41	23 V	-5 V	650 V	N-Channel	-55 °C	150 °C	2131 pF	34 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 11.30
		10	$ 11.20
		100	$ 11.10
Digikey	Tube	1	$ 15.67
		30	$ 9.65
		120	$ 8.51
Newark	Each	1	$ 17.02
		10	$ 16.13
		25	$ 12.52
		50	$ 11.93
		100	$ 11.34
		480	$ 11.33

Description

General part information

IMW65R027 Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features which increase the device performance, robustness, and ease of use. The IMW65R027M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation.This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.