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COOLSIC™ MOSFET TECHNOLOGY LEVERAGES THE STRONG PHYSICAL CHARACTERISTICS OF SILICON CARBIDE, ADDING UNIQUE FEATURES WHICH INCREASE THE DEVICE PERFORMANCE, ROBUSTNESS, AND EASE OF USE.
| Part | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Vgs (Max) [Max] | Vgs (Max) [Min] | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-3 | 5.7 V | 62 nC | 189 W | 18 V | 47 A | Through Hole | PG-TO247-3-41 | 23 V | -5 V | 650 V | N-Channel | -55 °C | 150 °C | 2131 pF | 34 mOhm |