STPSC10H12B-TR1

Obsolete

STMicroelectronics

DIODE SIL CARBIDE 1.2KV 10A DPAK

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STPSC10H12B-TR1

Obsolete

STMicroelectronics

DIODE SIL CARBIDE 1.2KV 10A DPAK

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC10H12B-TR1

Capacitance @ Vr, F	725 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.5 V

STPSC10H065DLF Series

2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Grade	Qualification	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction
STMicroelectronics STPSC10H065B-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	650 V	480 pF
STMicroelectronics STPSC10H065DLF	100 µA	1.55 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	8-PowerVDFN	PowerFlat™ (8x8) HV	650 V	595 pF
STMicroelectronics STPSC10H065GY-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	650 V	480 pF	Automotive	AEC-Q101
STMicroelectronics STPSC10H12DY	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Through Hole	-40 °C	175 ░C	No Recovery Time	TO-220-2	TO-220AC	1.2 kV	725 pF	Automotive	AEC-Q101
STMicroelectronics STPSC10H065G-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	650 V	480 pF
STMicroelectronics STPSC10TH13TI	100 µA	1.75 V		SiC (Silicon Carbide) Schottky	Through Hole			No Recovery Time	TO-220-3	TO-220AB Insulated	650 V				10 A	1 Pair Series Connection	150 °C
STMicroelectronics STPSC10H12B-TR1	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	1.2 kV	725 pF
STMicroelectronics STPSC10H12CWL	30 µA	1.5 V		SiC (Silicon Carbide) Schottky	Through Hole	-40 °C	175 ░C	No Recovery Time	TO-247-3	TO-247-3	1.2 kV				19 A	1 Pair Common Cathode

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STPSC10H065DLF Series

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

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Technical documentation and resources