STPSC10H065DLF
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT
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STPSC10H065DLF
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC10H065DLF |
|---|---|
| Capacitance @ Vr, F | 595 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | 8-PowerVDFN |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V |
Pricing
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Description
General part information
STPSC10H065DLF Series
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources