STPSC10H065DLF

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT

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STPSC10H065DLF

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT

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Description Specifications Series Pricing CAD Documents

Description

General part information

STPSC10 Series

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC10H065DLF

Capacitance	595 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	8-PowerVDFN
Package Length	8 mm
Package Name	PowerFlat™
Package Width	8 mm
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.55 V

STPSC10 Series

2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode

Part	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Capacitance	Current - Reverse Leakage	Package Name	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package Width	Package Length	Qualification	Grade	Current - Average Rectified (Io) (per Diode)	Diode Pair Count	Diode Configuration
STMicroelectronics STPSC10H065B-TR	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.75 V 1.75 V	480 pF	100 µA	DPak	Surface Mount	650 V	500 mA	No Recovery Time	500 mA 500 mA
STMicroelectronics STPSC10H065DLF	8-PowerVDFN	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.55 V	595 pF	100 µA	PowerFlat™	Surface Mount	650 V	500 mA	No Recovery Time	500 mA 500 mA	8 mm	8 mm
STMicroelectronics STPSC10C065RY	I2PAK TO-262-3 Long Leads TO-262AA	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A		480 pF	100 µA	I2PAK	Through Hole	650 V	500 mA	No Recovery Time	500 mA 500 mA			AEC-Q101	Automotive
STMicroelectronics STPSC10H065GY-TR	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.75 V 1.75 V	480 pF	100 µA	D2PAK	Surface Mount	650 V	500 mA	No Recovery Time	500 mA 500 mA			AEC-Q101	Automotive
STMicroelectronics STPSC10H12DY	TO-220-2	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.5 V	725 pF	60 µA	TO-220AC	Through Hole	1200 V	500 mA	No Recovery Time	500 mA 500 mA			AEC-Q101	Automotive
STMicroelectronics STPSC10H065G-TR	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.75 V 1.75 V	480 pF	100 µA	D2PAK	Surface Mount	650 V	500 mA	No Recovery Time	500 mA 500 mA
STMicroelectronics STPSC10H12GY-TR	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.5 V	725 pF	60 µA	D2PAK	Surface Mount	1200 V	500 mA	No Recovery Time	500 mA 500 mA			AEC-Q101	Automotive
STMicroelectronics STPSC10TH13TI	TO-220-3	150 °C		SiC (Silicon Carbide) Schottky		1.75 V 1.75 V		100 µA	TO-220AB Insulated	Through Hole	650 V	500 mA	No Recovery Time	500 mA 500 mA					10 A	1 pair	Series Connection
STMicroelectronics STPSC10H12B-TR1	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.5 V	725 pF	60 µA	DPak	Surface Mount	1200 V	500 mA	No Recovery Time	500 mA 500 mA
STMicroelectronics STPSC10H12B2-TR	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	-40 °C	SiC (Silicon Carbide) Schottky	10 A	1.5 V	725 pF	60 µA	DPAK HV	Surface Mount	1200 V	500 mA	No Recovery Time	500 mA 500 mA