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STD8N80K5 - MFG_DPAK(TO252-3)

STD8N80K5

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STMicroelectronics

N-CHANNEL 800 V, 800 MOHM TYP., 6 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

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STD8N80K5 - MFG_DPAK(TO252-3)

STD8N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 800 MOHM TYP., 6 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD8N80K5
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]16.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 2.17
10$ 1.68
50$ 1.36
100$ 1.21
500$ 1.01
DigikeyCut Tape (CT) 1$ 2.23
10$ 1.86
100$ 1.48
500$ 1.25
1000$ 1.06
Digi-Reel® 1$ 2.23
10$ 1.86
100$ 1.48
500$ 1.25
1000$ 1.06
Tape & Reel (TR) 2500$ 0.94
NewarkEach (Supplied on Cut Tape) 1$ 2.76
10$ 2.25
25$ 2.09
50$ 1.93
100$ 1.77
250$ 1.66
500$ 1.55
1000$ 1.48

Description

General part information

STD8N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.