
STD8N80K5
ActiveN-CHANNEL 800 V, 800 MOHM TYP., 6 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.

STD8N80K5
ActiveN-CHANNEL 800 V, 800 MOHM TYP., 6 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD8N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 950 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 2.17 | |
| 10 | $ 1.68 | |||
| 50 | $ 1.36 | |||
| 100 | $ 1.21 | |||
| 500 | $ 1.01 | |||
| Digikey | Cut Tape (CT) | 1 | $ 2.23 | |
| 10 | $ 1.86 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.06 | |||
| Digi-Reel® | 1 | $ 2.23 | ||
| 10 | $ 1.86 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.06 | |||
| Tape & Reel (TR) | 2500 | $ 0.94 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.76 | |
| 10 | $ 2.25 | |||
| 25 | $ 2.09 | |||
| 50 | $ 1.93 | |||
| 100 | $ 1.77 | |||
| 250 | $ 1.66 | |||
| 500 | $ 1.55 | |||
| 1000 | $ 1.48 | |||
Description
General part information
STD8N80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources