STD8N80K5 Series

N-channel 800 V, 800 mOhm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package

Catalog

N-channel 800 V, 800 mOhm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package

Part	Technology	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STD8N80K5	MOSFET (Metal Oxide)	5 V	N-Channel	30 V	16.5 nC	110 W	450 pF	DPAK	6 A	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	Surface Mount	950 mOhm	800 V

Catalog

N-channel 800 V, 800 mOhm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.