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STP4NK60Z - STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube

STP4NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 1.7 OHM TYP., 4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetDatasheet+18
STP4NK60Z - STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube

STP4NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 1.7 OHM TYP., 4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP4NK60Z
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds510 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 0.62
2000$ 0.60
5000$ 0.59
DigikeyTube 1$ 1.16
50$ 0.94
100$ 0.77
500$ 0.70
NewarkEach 1$ 1.16
10$ 0.94
100$ 0.73
500$ 0.70
1000$ 0.69
2500$ 0.64
10000$ 0.60

Description

General part information

STP4NK60Z Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.