STP4NK60Z Series

N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package

Catalog

N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Package / Case	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Technology
STMicroelectronics STP4NK60Z	10 V	Through Hole	70 W	TO-220-3	150 °C	TO-220	26 nC	510 pF	30 V	600 V	2 Ohm	4 A	4.5 V	N-Channel	MOSFET (Metal Oxide)

Catalog

N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.