ZVP0545GTA

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 0.075A I(D), 450V, 150OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 0.075A I(D), 450V, 150OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP0545GTA

Current - Continuous Drain (Id) @ 25°C	75 mA
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	150 Ohm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Supplier Device Package	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)
Diodes Inc ZVP0545GTA	20 V	SOT-223-3	P-Channel	TO-261-4 TO-261AA	150 Ohm	Surface Mount	120 pF	75 mA	MOSFET (Metal Oxide)	10 V	4.5 V	-55 °C	150 °C	2 W	450 V

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources