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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Supplier Device Package | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | SOT-223-3 | P-Channel | TO-261-4 TO-261AA | 150 Ohm | Surface Mount | 120 pF | 75 mA | MOSFET (Metal Oxide) | 10 V | 4.5 V | -55 °C | 150 °C | 2 W | 450 V |