SSM6P36FE,LM

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6P36FE,LM

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Rds On (Max) @ Id, Vgs	1.31 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Configuration	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6P36FE,LM	Surface Mount	2 P-Channel	Logic Level Gate	43 pF	150 °C	20 V	1.31 Ohm	SOT-563 SOT-666	ES6	330 mA	MOSFET (Metal Oxide)	1 V	1.2 nC

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General part information

Mosfet Array 20V 330mA 150mW Surface Mount ES6

Technical documentation and resources