MOSFET 2P-CH 20V 0.33A ES6
| Part | Mounting Type | Configuration | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 2 P-Channel | Logic Level Gate | 43 pF | 150 °C | 20 V | 1.31 Ohm | SOT-563 SOT-666 | ES6 | 330 mA | MOSFET (Metal Oxide) | 1 V | 1.2 nC |