TJ8S06M3L(T6L1,NQ)

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ8S06M3L(T6L1,NQ)

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	890 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	27 W
Rds On (Max) @ Id, Vgs	104 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ)	27 W	DPAK+	8 A	6 V 10 V	Surface Mount	175 °C	890 pF	MOSFET (Metal Oxide)	19 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	104 mOhm	-20 V	10 V	P-Channel	3 V
Toshiba Semiconductor and Storage TJ8S06M3L,LXHQ	27 W	DPAK+	8 A	6 V 10 V	Surface Mount	175 °C	890 pF	MOSFET (Metal Oxide)	19 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	104 mOhm	-20 V	10 V	P-Channel	3 V

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General part information

P-Channel 60 V 8A (Ta) 27W (Tc) Surface Mount DPAK+

Technical documentation and resources