TJ8S06 Series

Catalog

MOSFET P-CH 60V 8A DPAK

Part	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ)	27 W	DPAK+	8 A	6 V 10 V	Surface Mount	175 °C	890 pF	MOSFET (Metal Oxide)	19 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	104 mOhm	-20 V	10 V	P-Channel	3 V
Toshiba Semiconductor and Storage TJ8S06M3L,LXHQ	27 W	DPAK+	8 A	6 V 10 V	Surface Mount	175 °C	890 pF	MOSFET (Metal Oxide)	19 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	104 mOhm	-20 V	10 V	P-Channel	3 V