DMN3029LFG-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3029LFG-7

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	18.6 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	1.8 V

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	FET Type	Power Dissipation (Max)
Diodes Inc DMN3029LFG-13	1.8 V	30 V	5.3 A	8-PowerVDFN	580 pF	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	18.6 mOhm	25 V	POWERDI3333-8	N-Channel	1 W
Diodes Inc DMN3029LFG-7	1.8 V	30 V	5.3 A	8-PowerVDFN	580 pF	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	18.6 mOhm	25 V	POWERDI3333-8	N-Channel	1 W

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General part information

N-Channel Enhancement Mode MOSFET

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