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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.8 V | 30 V | 5.3 A | 8-PowerVDFN | 580 pF | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.5 V 10 V | 18.6 mOhm | 25 V | POWERDI3333-8 | N-Channel | 1 W |
Diodes Inc | 1.8 V | 30 V | 5.3 A | 8-PowerVDFN | 580 pF | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.5 V 10 V | 18.6 mOhm | 25 V | POWERDI3333-8 | N-Channel | 1 W |