DMN2009LSS-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 20V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 20V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2009LSS-13

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

N-Channel MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Diodes Inc DMN2009LSS-13	-55 °C	150 °C	12 A	58.3 nC	20 V	8-SOIC	3.9 mm	0.154 in	8 mOhm	8-SO	Surface Mount	MOSFET (Metal Oxide)	2555 pF	2 W	N-Channel	1.2 V	12 V	10 V	2.5 V

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General part information

N-Channel MOSFET

Technical documentation and resources