N-Channel MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | FET Type | Vgs(th) (Max) @ Id | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | 12 A | 58.3 nC | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 8 mOhm | 8-SO | Surface Mount | MOSFET (Metal Oxide) | 2555 pF | 2 W | N-Channel | 1.2 V | 12 V | 10 V | 2.5 V |