STW40NF20

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STMicroelectronics

MOSFET N-CH 200V 40A TO247-3

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STW40NF20

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STMicroelectronics

MOSFET N-CH 200V 40A TO247-3

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW40NF20	STW40 Series

Current - Continuous Drain (Id) @ 25°C	-	32 - 38 A
Drain to Source Voltage (Vdss)	200 V	200 - 950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	57 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC	56.5 - 100 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF	2355 - 3480 pF
Input Capacitance (Ciss) (Max) @ Vds	-	2500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	-	150 °C
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	450 W
Power Dissipation (Max)	-	250 W
Rds On (Max) @ Id, Vgs	45 mOhm	45 - 130 mOhm
Supplier Device Package	TO-247-3	TO-247, TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 - 30 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

STW40 Series

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STW40N95DK5	TO-247-3	3480 pF	130 mOhm	TO-247	450 W	5 V	38 A	-55 °C	150 °C	Through Hole	100 nC	N-Channel	10 V	950 V	30 V	MOSFET (Metal Oxide)
STMicroelectronics STW40N60M2	TO-247-3		88 mOhm	TO-247-3		4 V	34 A	-55 °C	150 °C	Through Hole		N-Channel	10 V	600 V	25 V	MOSFET (Metal Oxide)	250 W	57 nC	2500 pF
STMicroelectronics STW40N65M2	TO-247-3	2355 pF	99 mOhm	TO-247-3		4 V	32 A			Through Hole	56.5 nC	N-Channel	10 V	650 V	25 V	MOSFET (Metal Oxide)	250 W			150 °C
STMicroelectronics STW40NF20	TO-247-3	2500 pF	45 mOhm	TO-247-3		4 V		-55 °C	150 °C	Through Hole	75 nC	N-Channel	10 V	200 V	20 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.17
		10	$ 3.44
		100	$ 2.45
		500	$ 2.03

Description

General part information

STW40 Series

These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.

Documents

Technical documentation and resources