JANTX2N3636UB

Active

Microchip Technology

BIPOLAR TRANSISTORS - BJT 175V 1A 1W 3 PIN CER SMALL-SIGNAL BJT THT

Find alt

Alpha

JANTX2N3636UB

Active

Microchip Technology

BIPOLAR TRANSISTORS - BJT 175V 1A 1W 3 PIN CER SMALL-SIGNAL BJT THT

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

2N3636 Series

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N3636UB

Current - Collector (Ic) (Max)	1 A
Current - Collector Cutoff (Max)	10 µA
DC Current Gain (hFE) (Min)	50
Grade	Military
Mounting Type	Surface Mount
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	No Lead, 3-SMD
Package Name	UB
Power - Max	1.5 W
Qualification	MIL-PRF-19500, 357
Transistor Type	PNP
Vce Saturation (Max)	600 mV
Voltage - Collector Emitter Breakdown (Max)	175 V

2N3636 Series

PNP Silicon Amplifier -140V, -1A

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Vce Saturation (Max)	Power - Max	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Qualification	Grade
Microchip Technology 2N3636	Through Hole	-65 °C	200 °C	TO-39 (TO-205AD)	PNP	TO-205AD TO-39-3 Metal Can	175 V	1 A	600 mV	1 VA	50	10 µA
Microchip Technology 2N3636L	Through Hole	-65 °C	200 °C	TO-5AA	PNP	TO-205AA TO-5-3 Metal Can	175 V	1 A	600 mV	1 VA	50	10 µA
Microchip Technology JANTXV2N3636L	Through Hole	-65 °C	200 °C	TO-5AA	PNP	TO-205AA TO-5-3 Metal Can	175 V	1 A	600 mV	1 VA	50	10 µA	357 MIL-PRF-19500	Military
Microchip Technology JAN2N3636L	Through Hole	-65 °C	200 °C	TO-5AA	PNP	TO-205AA TO-5-3 Metal Can	175 V	1 A	600 mV	1 VA	50	10 µA	357 MIL-PRF-19500	Military
Microchip Technology JANTXV2N3636UB	Surface Mount	-65 °C	200 °C	UB	PNP	3-SMD No Lead	175 V	1 A	600 mV	1.5 W	50	10 µA	357 MIL-PRF-19500	Military
Microchip Technology JANTX2N3636UB	Surface Mount	-65 °C	200 °C	UB	PNP	3-SMD No Lead	175 V	1 A	600 mV	1.5 W	50	10 µA	357 MIL-PRF-19500	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

JANTX2N3636UB | Datasheet

2N3634 2N3635 2N3636 2N3637

Product Change Notice EN