
2N3636
Active175 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

2N3636
Active175 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES
Description
General part information
2N3636 Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3636 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 50 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 1 VA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
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