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2N3636

2N3636

Active
Microchip Technology

175 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

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2N3636

2N3636

Active
Microchip Technology

175 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

Find alt

Description

General part information

2N3636 Series

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.

Technical Specifications

Parameters and characteristics for this part

Specification2N3636
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)50
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39 (TO-205AD)
Power - Max1 VA
Transistor TypePNP
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)175 V

Pricing

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