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DMN6140L-13 - ONSEMI BAS40LT1G

DMN6140L-13

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 2.3 A, 140 MOHM, SOT-23, 3 PINS, SURFACE MOUNT

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DMN6140L-13 - ONSEMI BAS40LT1G

DMN6140L-13

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 2.3 A, 140 MOHM, SOT-23, 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6140L-13
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds315 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)700 mW
Rds On (Max) @ Id, Vgs140 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Digi-Reel® 1$ 0.38
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05
NewarkEach (Supplied on Cut Tape) 1$ 0.26
10$ 0.18
25$ 0.16
50$ 0.14

Description

General part information

DMN6140LQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.