DMN6140LQ-13
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
DMN6140LQ-13
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN6140LQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) @ Id, Vgs | 140 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.50 | |
| 10 | $ 0.31 | |||
| 100 | $ 0.20 | |||
| 500 | $ 0.15 | |||
| 1000 | $ 0.13 | |||
| 2000 | $ 0.12 | |||
| 5000 | $ 0.10 | |||
| Digi-Reel® | 1 | $ 0.50 | ||
| 10 | $ 0.31 | |||
| 100 | $ 0.20 | |||
| 500 | $ 0.15 | |||
| 1000 | $ 0.13 | |||
| 2000 | $ 0.12 | |||
| 5000 | $ 0.10 | |||
| Tape & Reel (TR) | 10000 | $ 0.09 | ||
| 20000 | $ 0.09 | |||
| 30000 | $ 0.08 | |||
| 50000 | $ 0.08 | |||
| 70000 | $ 0.08 | |||
Description
General part information
DMN6140LQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources