DMN6140LQ-13
ActiveDiodes Inc
MOSFETS 60V N-CH ENH FET 60VDSS 20VGSS 10A
DMN6140LQ-13
ActiveDiodes Inc
MOSFETS 60V N-CH ENH FET 60VDSS 20VGSS 10A
Description
General part information
DMN6140LQ-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN6140LQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 8.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 315 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 700 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 140 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources