SST39VF040-70-4I-NHE
ActiveIC FLASH 4MBIT PARALLEL 32PLCC
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SST39VF040-70-4I-NHE
ActiveIC FLASH 4MBIT PARALLEL 32PLCC
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | SST39VF040-70-4I-NHE | SST39VF040 Series |
|---|---|---|
| Access Time | 70 ns | 70 ns |
| Memory Format | FLASH | FLASH |
| Memory Interface | Parallel | Parallel |
| Memory Organization | 512 K | 512 K |
| Memory Size | 512 kb | 512 kb |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 85 °C | 70 - 85 °C |
| Operating Temperature [Min] | -40 °C | -40 - 0 °C |
| Package / Case | 32-LCC (J-Lead) | 32-LCC (J-Lead), 32-TFSOP, 48-TFBGA |
| Package / Case | - | 0.488 in |
| Package / Case | - | 12.4 mm |
| Supplier Device Package | 32-PLCC | 32-PLCC, 32-TSOP, 48-TFBGA |
| Supplier Device Package [x] | 11.43 | 11.43 |
| Supplier Device Package [y] | 13.97 | 13.97 |
| Technology | FLASH | FLASH |
| Voltage - Supply [Max] | 3.6 V | 3.6 V |
| Voltage - Supply [Min] | 2.7 V | 2.7 V |
| Write Cycle Time - Word, Page [custom] | 20 µs | 20 µs |
| Write Cycle Time - Word, Page [custom] | 20 µs | 20 µs |
SST39VF040 Series
4Mb 2.7-3.6V Parallel Flash
| Part | Access Time | Memory Size | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] | Memory Interface | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Memory Format | Technology | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case [y] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology SST39VF040-70-4I-NHE-T | 70 ns | 512 kb | 32-PLCC | 11.43 | 13.97 | Parallel | Non-Volatile | 85 °C | -40 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-LCC (J-Lead) | ||
Microchip Technology SST39VF040-70-4I-WHE-T | 70 ns | 512 kb | 32-TSOP | Parallel | Non-Volatile | 85 °C | -40 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-TFSOP | 0.488 in | 12.4 mm | ||
Microchip Technology SST39VF040-70-4C-WHE | 70 ns | 512 kb | 32-TSOP | Parallel | Non-Volatile | 70 °C | 0 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-TFSOP | 0.488 in | 12.4 mm | ||
Microchip Technology SST39VF040-70-4C-WHE-T | 70 ns | 512 kb | 32-TSOP | Parallel | Non-Volatile | 70 °C | 0 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-TFSOP | 0.488 in | 12.4 mm | ||
Microchip Technology SST39VF040-70-4C-NHE | 70 ns | 512 kb | 32-PLCC | 11.43 | 13.97 | Parallel | Non-Volatile | 70 °C | 0 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-LCC (J-Lead) | ||
Microchip Technology SST39VF040-70-4I-NHE | 70 ns | 512 kb | 32-PLCC | 11.43 | 13.97 | Parallel | Non-Volatile | 85 °C | -40 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-LCC (J-Lead) | ||
Microchip Technology SST39VF040-70-4C-B3KE | 70 ns | 512 kb | 48-TFBGA | Parallel | Non-Volatile | 70 °C | 0 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 48-TFBGA | ||||
Microchip Technology SST39VF040-70-4I-WHE | 70 ns | 512 kb | 32-TSOP | Parallel | Non-Volatile | 85 °C | -40 °C | 512 K | FLASH | FLASH | 2.7 V | 3.6 V | Surface Mount | 20 µs | 20 µs | 32-TFSOP | 0.488 in | 12.4 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.61 | |
| 25 | $ 2.52 | |||
| 100 | $ 2.42 | |||
| Microchip Direct | TUBE | 1 | $ 2.53 | |
| 25 | $ 2.45 | |||
| 100 | $ 2.35 | |||
| 1000 | $ 2.21 | |||
| 5000 | $ 2.10 | |||
Description
General part information
SST39VF040 Series
The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.
Documents
Technical documentation and resources