SST39VF040 Series

4Mb 2.7-3.6V Parallel Flash

Catalog

4Mb 2.7-3.6V Parallel Flash

Part	Access Time	Memory Size	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Memory Interface	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Memory Format	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case	Package / Case [y]	Package / Case [y]
Microchip Technology SST39VF040-70-4I-NHE-T	70 ns	512 kb	32-PLCC	11.43	13.97	Parallel	Non-Volatile	85 °C	-40 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-LCC (J-Lead)
Microchip Technology SST39VF040-70-4I-WHE-T	70 ns	512 kb	32-TSOP			Parallel	Non-Volatile	85 °C	-40 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-TFSOP	0.488 in	12.4 mm
Microchip Technology SST39VF040-70-4C-WHE	70 ns	512 kb	32-TSOP			Parallel	Non-Volatile	70 °C	0 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-TFSOP	0.488 in	12.4 mm
Microchip Technology SST39VF040-70-4C-WHE-T	70 ns	512 kb	32-TSOP			Parallel	Non-Volatile	70 °C	0 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-TFSOP	0.488 in	12.4 mm
Microchip Technology SST39VF040-70-4C-NHE	70 ns	512 kb	32-PLCC	11.43	13.97	Parallel	Non-Volatile	70 °C	0 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-LCC (J-Lead)
Microchip Technology SST39VF040-70-4I-NHE	70 ns	512 kb	32-PLCC	11.43	13.97	Parallel	Non-Volatile	85 °C	-40 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-LCC (J-Lead)
Microchip Technology SST39VF040-70-4C-B3KE	70 ns	512 kb	48-TFBGA			Parallel	Non-Volatile	70 °C	0 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	48-TFBGA
Microchip Technology SST39VF040-70-4I-WHE	70 ns	512 kb	32-TSOP			Parallel	Non-Volatile	85 °C	-40 °C	512 K	FLASH	FLASH	2.7 V	3.6 V	Surface Mount	20 µs	20 µs	32-TFSOP	0.488 in	12.4 mm

Catalog

4Mb 2.7-3.6V Parallel Flash

Key Features

• + Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• + Single Voltage Read and Write Operations

• – 3.0-3.6V for SST39LF512/010/020/040

• – 2.7-3.6V for SST39VF512/010/020/040

• + Superior Reliability

• – Endurance: 100,000 Cycles (typical)

• – Greater than 100 years Data Retention

• + Low Power Consumption

• (typical values at 14 MHz)

• – Active Current: 5 mA (typical)

• – Standby Current: 1 µA (typical)

• + Sector-Erase Capability

• – Uniform 4 KByte sectors

• + Fast Read Access Time:

• – 45 ns for SST39LF512/010/020/040

• – 55 ns for SST39LF020/040

• – 70 ns for SST39VF512/010/020/040

• + Latched Address and Data

• + Fast Erase and Byte-Program:

• – Sector-Erase Time: 18 ms (typical)

• – Chip-Erase Time: 70 ms (typical)

• – Byte-Program Time: 14 µs (typical)

• – Chip Rewrite Time:

• 1 second (typical) for SST39LF/VF512

• 2 seconds (typical) for SST39LF/VF010

• 4 seconds (typical) for SST39LF/VF020

• 8 seconds (typical) for SST39LF/VF040

• + Automatic Write Timing

• – Internal VPP Generation

• + End-of-Write Detection

• – Toggle Bit

• – Data# Polling

• + CMOS I/O Compatibility

• + JEDEC Standard

• – Flash EEPROM Pinouts and command sets

• + Packages Available

• – 32-lead PLCC

• – 32-lead TSOP (8mm x 14mm)

• – 48-ball TFBGA (6mm x 8mm)

• – 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• + All devices are RoHS compliant

Description

The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.