WNSC2D10650XQ

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WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220F

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WNSC2D10650XQ

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WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220F

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Digikey	Tube	3000	$ 1.30

Description

General part information

WNSC2 Series

Diode 650 V 10A Through Hole TO-220F

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WNSC2D10650XQ	WNSC2 Series

Capacitance @ Vr, F	310 pF	95 - 2068 pF
Current - Average Rectified (Io)	10 A	2 - 40 A
Current - Average Rectified (Io) (per Diode)	-	10 - 30 A
Current - Continuous Drain (Id) @ 25°C	-	7 A
Current - Reverse Leakage @ Vr	50 µA	10 - 220 µA
Diode Configuration	-	1 Pair Common Cathode
Drain to Source Voltage (Vdss)	-	1700 V
Drive Voltage (Max Rds On, Min Rds On)	-	15 - 18 V
FET Type	-	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	12 nC
Input Capacitance (Ciss) (Max) @ Vds	-	225 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	-	-55 °C
Operating Temperature	-	175 ░C
Operating Temperature - Junction	175 °C	175 °C
Operating Temperature - Junction	-	175 ░C
Operating Temperature - Junction	-	-55 C
Package / Case	TO-220-2 Full Pack, Isolated Tab	TO-247-3, TO-247-2, TO-220-2 Full Pack, Isolated Tab, SC-63, DPAK (2 Leads + Tab), TO-252-3, SMB, DO-214AA, SC-65-3, TO-3P-3, 4-VSFN Exposed Pad, TO-220-2
Power Dissipation (Max)	-	79 W
Rds On (Max) @ Id, Vgs	-	1 Ohm
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220F	TO-247-3, TO-247-2, TO-220F, DPAK, SMB, TO-3PF, 5-DFN (8x8), TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky, MOSFET (Metal Oxide)
Vgs (Max)	-	-10 V
Vgs (Max)	-	22 V
Vgs(th) (Max) @ Id	-	4.2 V
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	1.2 - 650 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V	1.6 - 1.8 V
Voltage - Forward (Vf) (Max) @ If	-	1.6 V

WNSC2 Series

DIODE ARR SIC 1200V 10A TO247-3

Part	Technology	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Operating Temperature - Junction	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
WeEn Semiconductors WNSC2D101200CW6Q	SiC (Silicon Carbide) Schottky	TO-247-3	No Recovery Time	175 ░C	-55 C	Through Hole	TO-247-3	10 A	1.6 V	1.2 kV	1 Pair Common Cathode
WeEn Semiconductors WNSC2D201200W6Q	SiC (Silicon Carbide) Schottky	TO-247-2	No Recovery Time			Through Hole	TO-247-2		1.8 V	1.2 kV		175 °C	845 pF	200 µA
WeEn Semiconductors WNSC2D101200W6Q	SiC (Silicon Carbide) Schottky	TO-247-2	No Recovery Time			Through Hole	TO-247-2		1.65 V	1.2 kV		175 °C	490 pF	110 µA	10 A
WeEn Semiconductors WNSC2D301200W6Q	SiC (Silicon Carbide) Schottky	TO-247-2	No Recovery Time	175 ░C	-55 C	Through Hole	TO-247-2			1.2 kV				150 µA	30 A	1.6 V
WeEn Semiconductors WNSC2D10650XQ	SiC (Silicon Carbide) Schottky	TO-220F	No Recovery Time			Through Hole	TO-220-2 Full Pack, Isolated Tab		1.7 V	650 V		175 °C	310 pF	50 µA	10 A
WeEn Semiconductors WNSC2D101200D6J	SiC (Silicon Carbide) Schottky	DPAK	No Recovery Time	175 ░C	-55 C	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3		1.6 V	1.2 kV			481 pF	50 µA	10 A
WeEn Semiconductors WNSC2D151200WQ	SiC (Silicon Carbide) Schottky	TO-247-2	No Recovery Time			Through Hole	TO-247-2		1.7 V	1.2 kV		175 °C	700 pF	150 µA	15 A
WeEn Semiconductors WNSC2D03650MBJ	SiC (Silicon Carbide) Schottky	SMB	No Recovery Time			Surface Mount	DO-214AA, SMB		1.7 V	650 V		175 °C	130 pF	20 µA	3 A
WeEn Semiconductors WNSC2D04650XQ	SiC (Silicon Carbide) Schottky	TO-220F	No Recovery Time			Through Hole	TO-220-2 Full Pack, Isolated Tab		1.7 V	650 V		175 °C	125 pF	20 µA	4 A
WeEn Semiconductors WNSC2D20650CJQ	SiC (Silicon Carbide) Schottky	TO-3PF	No Recovery Time			Through Hole	SC-65-3, TO-3P-3	20 A	1.7 V	650 V	1 Pair Common Cathode	175 °C		50 µA