| Capacitance @ Vr, F | - | 95 - 2068 pF |
| Current - Average Rectified (Io) | - | 2 - 40 A |
| Current - Average Rectified (Io) (per Diode) | 20 A | 10 - 30 A |
| Current - Continuous Drain (Id) @ 25°C | - | 7 A |
| Current - Reverse Leakage @ Vr | 50 µA | 10 - 220 µA |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Drain to Source Voltage (Vdss) | - | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 15 - 18 V |
| FET Type | - | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | - | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | - | 225 pF |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 175 ░C |
| Operating Temperature - Junction | 175 °C | 175 °C |
| Operating Temperature - Junction | - | 175 ░C |
| Operating Temperature - Junction | - | -55 C |
| Package / Case | SC-65-3, TO-3P-3 | TO-247-3, TO-247-2, TO-220-2 Full Pack, Isolated Tab, SC-63, DPAK (2 Leads + Tab), TO-252-3, SMB, DO-214AA, SC-65-3, TO-3P-3, 4-VSFN Exposed Pad, TO-220-2 |
| Power Dissipation (Max) | - | 79 W |
| Rds On (Max) @ Id, Vgs | - | 1 Ohm |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | TO-3PF | TO-247-3, TO-247-2, TO-220F, DPAK, SMB, TO-3PF, 5-DFN (8x8), TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky, MOSFET (Metal Oxide) |
| Vgs (Max) | - | -10 V |
| Vgs (Max) | - | 22 V |
| Vgs(th) (Max) @ Id | - | 4.2 V |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 1.2 - 650 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V | 1.6 - 1.8 V |
| Voltage - Forward (Vf) (Max) @ If | - | 1.6 V |
