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STD110NH02LT4 - MFG_DPAK(TO252-3)

STD110NH02LT4

Obsolete
STMicroelectronics

MOSFET N-CH 24V 80A DPAK

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STD110NH02LT4 - MFG_DPAK(TO252-3)

STD110NH02LT4

Obsolete
STMicroelectronics

MOSFET N-CH 24V 80A DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD110NH02LT4
Drain to Source Voltage (Vdss)24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Input Capacitance (Ciss) (Max) @ Vds4450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs5 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STD11N50M2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources

No documents available