STD11N60M6

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STMicroelectronics

N-CHANNEL 600 V, 500 MOHM TYP., 8 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

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STD11N60M6

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STMicroelectronics

N-CHANNEL 600 V, 500 MOHM TYP., 8 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD11N60M6

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.3 nC
Input Capacitance (Ciss) (Max) @ Vds	387 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	520 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STD11N50M2 Series

N-channel 600 V, 500 mOhm typ., 8 A MDmesh M6 Power MOSFET in a DPAK package

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STD11N65M5	17 nC	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	DPAK	150 °C	85 W	25 V	Surface Mount	480 mOhm	620 pF	650 V	9 A	MOSFET (Metal Oxide)	5 V
STMicroelectronics STD11N60M6		N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	TO-252 (DPAK)			25 V	Surface Mount	520 mOhm		600 V	8 A	MOSFET (Metal Oxide)	4.75 V	90 W	387 pF	10.3 nC	-55 °C	150 °C
STMicroelectronics STD110NH02LT4	93 nC	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3		DPAK			20 V	Surface Mount	5 mOhm		24 V		MOSFET (Metal Oxide)	1 V	125 W	4450 pF		-55 °C	175 ░C	10 V	5 V
STMicroelectronics STD11N50M2		N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	DPAK		85 W	25 V	Surface Mount			500 V	8 A	MOSFET (Metal Oxide)	4 V		395 pF	12 nC	-55 °C	150 °C			530 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2500	$ 0.73
Newark	Each	1	$ 1.22
		10	$ 1.15
		100	$ 1.08
		500	$ 1.05
		1000	$ 1.05
		2500	$ 1.05
		5000	$ 1.05

Description

General part information

STD11N50M2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet