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DMNH6008SCTQ - Package Image for TO220AB

DMNH6008SCTQ

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 60V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB,

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DMNH6008SCTQ - Package Image for TO220AB

DMNH6008SCTQ

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 60V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMNH6008SCTQ
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2596 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)210 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.32
10$ 1.69
50$ 1.28
100$ 1.15
500$ 0.93
1000$ 0.84
2000$ 0.80
5000$ 0.79

Description

General part information

DMNH6008SCTQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.