DMNH6008SCTQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Qualification	Grade	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]
Diodes Inc DMNH6008SPSQ-13	AEC-Q101	Automotive	4 V	PowerDI5060-8	20 V	8 mOhm	8-PowerTDFN	40.1 nC	10 V	Surface Mount	60 V	2597 pF	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	16.5 A 88 A
Diodes Inc DMNH6008SCTQ	AEC-Q101	Automotive	4 V	TO-220-3		8 mOhm	TO-220-3		10 V	Through Hole	60 V	2596 pF	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	130 A	210 W	21 nC	20 V

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• < 1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMNH6008SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.