DMT6030LFDF-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMT6030LFDF-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT6030LFDF-7 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 639 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 9.62 W, 860 mW |
| Rds On (Max) @ Id, Vgs | 25.5 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.24 | |
| 6000 | $ 0.22 | |||
| 9000 | $ 0.21 | |||
| 15000 | $ 0.20 | |||
| 21000 | $ 0.20 | |||
Description
General part information
DMT6030LFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources