DMT6030LFDF Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	FET Type	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Diodes Inc DMT6030LFDF-13	N-Channel	20 V	MOSFET (Metal Oxide)	639 pF	U-DFN2020-6 (Type F)	4.5 V 10 V	2.5 V	Surface Mount	9.1 nC	6-UDFN Exposed Pad	60 V	-55 °C	150 °C	9.62 W 860 mW	25.5 mOhm
Diodes Inc DMT6030LFDF-7	N-Channel	20 V	MOSFET (Metal Oxide)	639 pF	U-DFN2020-6 (Type F)	4.5 V 10 V	2.5 V	Surface Mount	9.1 nC	6-UDFN Exposed Pad	60 V	-55 °C	150 °C	9.62 W 860 mW	25.5 mOhm

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production— Ensures More Reliable and Robust End Application

• 0.6mm Profile –Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low On-Resistance

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.