DMP3065LVT-7

Obsolete

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Obsolete

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3065LVT-7

Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

P-Channel Enhancement Mode MOSFET

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMP3065LVT-13	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	2.1 V	1.2 W	20 nC	30 V	Surface Mount	5.1 A	MOSFET (Metal Oxide)	4.5 V 10 V	P-Channel	20 V	42 mOhm	880 pF
Diodes Inc DMP3065LVT-7	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	2.1 V	1.2 W		30 V	Surface Mount	4.9 A	MOSFET (Metal Oxide)	4.5 V 10 V	P-Channel	20 V	42 mOhm		12.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources