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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [x] | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SOT-23-6 Thin TSOT-23-6 | -55 °C | 150 °C | 2.1 V | 1.2 W | 20 nC | 30 V | Surface Mount | 5.1 A | MOSFET (Metal Oxide) | 4.5 V 10 V | P-Channel | 20 V | 42 mOhm | 880 pF | |
Diodes Inc | SOT-23-6 Thin TSOT-23-6 | -55 °C | 150 °C | 2.1 V | 1.2 W | 30 V | Surface Mount | 4.9 A | MOSFET (Metal Oxide) | 4.5 V 10 V | P-Channel | 20 V | 42 mOhm | 12.3 nC |