BFR183WH6327XTSA1

Obsolete

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT323-3

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Obsolete

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	BFR183WH6327XTSA1

Current - Collector (Ic) (Max) [Max]	65 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	8 GHz
Gain	18.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.4 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	450 mW
Supplier Device Package	PG-SOT323
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Operating Temperature	Power - Max [Max]	Transistor Type	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Gain	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)
Infineon Technologies BFR183E6327HTSA1	150 °C	450 mW	NPN	8 GHz	PG-SOT23	65 mA	70	0.9 dB	1.4 dB	17.5 dBi	SC-59 SOT-23-3 TO-236-3	Surface Mount	12 V
Infineon Technologies BFR183WH6327XTSA1	150 °C	450 mW	NPN	8 GHz	PG-SOT323	65 mA	70	0.9 dB	1.4 dB	18.5 dBi	SC-70 SOT-323	Surface Mount	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount PG-SOT323

Technical documentation and resources