BFR183E6327HTSA1

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Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

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Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BFR183E6327HTSA1

Current - Collector (Ic) (Max) [Max]	65 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	8 GHz
Gain	17.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.4 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	450 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Operating Temperature	Power - Max [Max]	Transistor Type	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Gain	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)
Infineon Technologies BFR183E6327HTSA1	150 °C	450 mW	NPN	8 GHz	PG-SOT23	65 mA	70	0.9 dB	1.4 dB	17.5 dBi	SC-59 SOT-23-3 TO-236-3	Surface Mount	12 V
Infineon Technologies BFR183WH6327XTSA1	150 °C	450 mW	NPN	8 GHz	PG-SOT323	65 mA	70	0.9 dB	1.4 dB	18.5 dBi	SC-70 SOT-323	Surface Mount	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA

Technical documentation and resources