IXXN110N65C4H1

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IXYS

IGBT MOD 650V 210A 750W SOT227B

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IXYS

IGBT MOD 650V 210A 750W SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXXN110N65C4H1

Configuration	Single
Current - Collector (Ic) (Max) [Max]	210 A
Current - Collector Cutoff (Max) [Max]	50 µA
IGBT Type	PT
Input	Standard
Input Capacitance (Cies) @ Vce	3.69 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power - Max [Max]	750 W
Supplier Device Package	SOT-227B
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Input Capacitance (Cies) @ Vce	Mounting Type	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Configuration	Input	IGBT Type	Package / Case	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXXN110N65B4H1	50 µA	SOT-227B	215 A	3.65 nF	Chassis Mount	750 W	2.1 V	Single	Standard	PT	SOT-227-4 miniBLOC		650 V	-55 °C	175 ░C
IXYS IXXN110N65C4H1	50 µA	SOT-227B	210 A	3.69 nF	Chassis Mount	750 W	2.35 V	Single	Standard	PT	SOT-227-4 miniBLOC		650 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module PT Single 650 V 210 A 750 W Chassis Mount SOT-227B

Technical documentation and resources