IXXN110N65B4H1

Active

IXYS

IGBT MOD 650V 215A 750W SOT227B

Search across all available documentation for this part.

Active

IXYS

IGBT MOD 650V 215A 750W SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXXN110N65B4H1

Configuration	Single
Current - Collector (Ic) (Max) [Max]	215 A
Current - Collector Cutoff (Max) [Max]	50 µA
IGBT Type	PT
Input	Standard
Input Capacitance (Cies) @ Vce	3.65 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power - Max [Max]	750 W
Supplier Device Package	SOT-227B
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Input Capacitance (Cies) @ Vce	Mounting Type	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Configuration	Input	IGBT Type	Package / Case	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXXN110N65B4H1	50 µA	SOT-227B	215 A	3.65 nF	Chassis Mount	750 W	2.1 V	Single	Standard	PT	SOT-227-4 miniBLOC		650 V	-55 °C	175 ░C
IXYS IXXN110N65C4H1	50 µA	SOT-227B	210 A	3.69 nF	Chassis Mount	750 W	2.35 V	Single	Standard	PT	SOT-227-4 miniBLOC		650 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module PT Single 650 V 215 A 750 W Chassis Mount SOT-227B

Technical documentation and resources

No documents available