IPI80N06S208AKSA2
ObsoleteInfineon Technologies
IPI80N06S2-08 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 8 MΩ MAX, I2PAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMPERATURE, AND ULTRA LOW RDS(ON).
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IPI80N06S208AKSA2
ObsoleteInfineon Technologies
IPI80N06S2-08 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 8 MΩ MAX, I2PAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMPERATURE, AND ULTRA LOW RDS(ON).
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPI80N06S208AKSA2 |
|---|---|
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 96 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 215 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPI80N06 Series
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Grade | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Technology | Qualification | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 72 nC | 5680 pF | Automotive | 6.7 mOhm | 16 V | 2.2 V | 4.5 V 10 V | -55 °C | 175 ░C | 79 W | MOSFET (Metal Oxide) | AEC-Q101 | N-Channel | Through Hole | 60 V | ||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 3400 pF | 6.6 mOhm | 20 V | 4 V | 10 V | -55 °C | 175 ░C | MOSFET (Metal Oxide) | N-Channel | Through Hole | 55 V | 250 W | 110 nC | ||||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 56 nC | 4500 pF | Automotive | 7.4 mOhm | 20 V | 4 V | 10 V | -55 °C | 175 ░C | 79 W | MOSFET (Metal Oxide) | AEC-Q101 | N-Channel | Through Hole | 60 V | ||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 2860 pF | 8 mOhm | 20 V | 4 V | 10 V | -55 °C | 175 ░C | 215 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | 55 V | 96 nC | ||||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 81 nC | 6500 pF | Automotive | 5.7 mOhm | 20 V | 4 V | 10 V | -55 °C | 175 ░C | 107 W | MOSFET (Metal Oxide) | AEC-Q101 | N-Channel | Through Hole | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPI80N06 Series
N-Channel 55 V 80A (Tc) 215W (Tc) Through Hole PG-TO262-3-1
Documents
Technical documentation and resources