IPI80N06S207AKSA2

Obsolete

Infineon Technologies

IPI80N06S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 6.6 MΩ MAX, I2PAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, AND ULTRA LOW RDS(ON).

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DocumentsInfineon-MA005699111-MaterialContentSheet-v01_00-EN

IPI80N06S207AKSA2

Obsolete

Infineon Technologies

IPI80N06S2-07 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 6.6 MΩ MAX, I2PAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, AND ULTRA LOW RDS(ON).

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DocumentsInfineon-MA005699111-MaterialContentSheet-v01_00-EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI80N06S207AKSA2

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	6.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPI80N06 Series

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Qualification	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPI80N06S4L07AKSA2	I2PAK TO-262-3 Long Leads TO-262AA	72 nC	5680 pF	Automotive	6.7 mOhm	16 V	2.2 V	4.5 V 10 V	-55 °C	175 ░C	79 W	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	Through Hole	60 V
Infineon Technologies IPI80N06S207AKSA2	I2PAK TO-262-3 Long Leads TO-262AA		3400 pF		6.6 mOhm	20 V	4 V	10 V	-55 °C	175 ░C		MOSFET (Metal Oxide)		N-Channel	Through Hole	55 V	250 W	110 nC
Infineon Technologies IPI80N06S407AKSA2	I2PAK TO-262-3 Long Leads TO-262AA	56 nC	4500 pF	Automotive	7.4 mOhm	20 V	4 V	10 V	-55 °C	175 ░C	79 W	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	Through Hole	60 V
Infineon Technologies IPI80N06S208AKSA2	I2PAK TO-262-3 Long Leads TO-262AA		2860 pF		8 mOhm	20 V	4 V	10 V	-55 °C	175 ░C	215 W	MOSFET (Metal Oxide)		N-Channel	Through Hole	55 V		96 nC
Infineon Technologies IPI80N06S405AKSA2	I2PAK TO-262-3 Long Leads TO-262AA	81 nC	6500 pF	Automotive	5.7 mOhm	20 V	4 V	10 V	-55 °C	175 ░C	107 W	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	Through Hole	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPI80N06 Series

N-Channel 55 V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

Documents

Technical documentation and resources

Infineon-MA005699111-MaterialContentSheet-v01_00-EN

Material Content SheetInfo