IMZ120R060M1HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 36 A, 1.2 KV, 0.078 OHM, TO-247

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IMZ120R060M1HXKSA1

Active

Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 36 A, 1.2 KV, 0.078 OHM, TO-247

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMZ120R060M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	PG-TO247-4-1
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.7 V

IMZ120 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type
Infineon Technologies IMZ120R090M1HXKSA1	-55 °C	175 ░C	1200 V	5.7 V	PG-TO247-4-1	-7 V 23 V	Through Hole	21 nC	117 mOhm	115 W	26 A	707 pF	15 V 18 V	TO-247-4	N-Channel
Infineon Technologies IMZ120R060M1HXKSA1	-55 °C	175 ░C	1200 V	5.7 V	PG-TO247-4-1	-7 V 23 V	Through Hole	31 nC	78 mOhm	150 W	36 A	1060 pF	15 V 18 V	TO-247-4	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.18
		30	$ 7.34
		120	$ 6.28
		510	$ 6.14
Newark	Each	1	$ 12.36
		10	$ 11.75
		25	$ 9.40
		50	$ 8.92
		100	$ 8.43
		480	$ 8.42
		720	$ 8.19

Description

General part information

IMZ120 Series

TheCoolSiC™1200 V, 60 mΩSiC MOSFETin TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.