Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 26 A, 1.2 KV, 0.09 OHM, TO-247
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 1200 V | 5.7 V | PG-TO247-4-1 | -7 V 23 V | Through Hole | 21 nC | 117 mOhm | 115 W | 26 A | 707 pF | 15 V 18 V | TO-247-4 | N-Channel |
Infineon Technologies | -55 °C | 175 ░C | 1200 V | 5.7 V | PG-TO247-4-1 | -7 V 23 V | Through Hole | 31 nC | 78 mOhm | 150 W | 36 A | 1060 pF | 15 V 18 V | TO-247-4 | N-Channel |