IPP070N08N3 G

Obsolete

Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP070N08N3 G

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	3840 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs [Max]	7 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPP070N06N G	Through Hole	TO-220-3	4 V	MOSFET (Metal Oxide)	20 V	7 mOhm	118 nC	250 W	N-Channel	60 V	4100 pF	10 V	-55 °C	175 ░C	PG-TO220-3
Infineon Technologies IPP070N08N3 G	Through Hole	TO-220-3	3.5 V	MOSFET (Metal Oxide)	20 V				N-Channel	80 V	3840 pF	6 V 10 V	-55 °C	175 ░C	PG-TO220-3	56 nC	136 W	7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 80A (Tc) 136W (Tc) Through Hole PG-TO220-3

Technical documentation and resources