MOSFET N-CH 60V 80A TO220-3
| Part | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | TO-220-3 | 4 V | MOSFET (Metal Oxide) | 20 V | 7 mOhm | 118 nC | 250 W | N-Channel | 60 V | 4100 pF | 10 V | -55 °C | 175 ░C | PG-TO220-3 | |||
Infineon Technologies | Through Hole | TO-220-3 | 3.5 V | MOSFET (Metal Oxide) | 20 V | N-Channel | 80 V | 3840 pF | 6 V 10 V | -55 °C | 175 ░C | PG-TO220-3 | 56 nC | 136 W | 7 mOhm |